1.5-/spl mu/m emission at room temperature of InAs quantum dots in strained InGaAs quantum well

Summary form only given. Since it has been predicted that remarkable improvement of the threshold current density and temperature sensitivity will occur if quantum dots (QDs) are used as the active layer of semiconductor lasers, several groups have attempted to fabricate quantum dot lasers. Recently, it has been of great interest that QDs will be also available for band structure engineering of semiconductor lasers and many groups have achieved room temperature lasing at 1.3-/spl mu/m using QDs as the active layer of the laser structure which is surrounded with a strain-reducing layer . In this paper, we reported 1.5-/spl mu/m luminescence at room temperature of InAs QDs in strained InGaAs quantum wells (QW) grown by metalorganic chemical vapor deposition (MOCVD).