A robust physical and predictive model for deep-submicrometer MOS circuit simulation

An efficient physical and predictive model (the Berkeley short-channel insulated-gate FET model, or BSIM3) for deep-submicrometer MOSFETs is presented with emphasis on both digital and analog applications. BSIM3 has extensive built-in dependences of important dimensional and processing parameters such as channel length, width, gate oxide thickness, junction depth, substrate doping concentration, and LDD (lightly doped drain) structures. The model is compact, and time-consuming functions are excluded. The ease of parameter extraction was a major consideration. The number of parameters is small (~25), and every parameter has a physical meaning; the effects of parameters on output characteristics are very predictive. This feature of BSIM3 makes statistical study of the device fabrication process possible. BSIM3 has been implemented in SPICE3 and the divergence problem is also greatly improved