DC—40-GHz SP4T switch IC using high-breakdown-voltage InGaAs/InP composite-channel HEMTs with an InAlP etch stopper

Author

Kamitsuna, Hideki ; Sugiyama, Hiroki ; Kosugi, Toshihiko ; Yokoyama, Haruki ; Murata, Koichi ; Yamane, Yasuro ; Enoki, Takatomo

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

2

Abstract

This paper presents a wideband and high power-handling single-pole four-throw (SP4T) switch IC using InGaAs/InP composite-channel (CC) HEMTs. Owing to the CC structure with an InAlP barrier, the input power for P1dB of 19.4 dBm is 6 dB higher than that of our conventional InGaAs single-channel HEMT switch, with identical wideband performance of ~40 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; digital integrated circuits; electric breakdown; gallium arsenide; indium compounds; power HEMT; power integrated circuits; DC SP4T switch IC; InAlP; InGaAs-InP; breakdown voltage; composite channel HEMTs; etch stopper; frequency 40 GHz; single-pole four-throw switch IC; Bandwidth; Etching; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Photonic integrated circuits; Switches; Wideband; InAlP etch stopper; InP-based HEMT; composite channel; power-handling capability; switch; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703068

Filename

4703068