Selector devices for cross-point ReRAM

Author

Kim, Seonghyun ; Lee, Wootae ; Hwang, Hyunsang

Author_Institution

Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea

fYear

2012

fDate

29-31 Aug. 2012

Firstpage

1

Lastpage

2

Abstract

Both varistor-type bidirectional selector (VBS) and ultrathin NbO₂ device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (>;3×10⁷A/cm²) and high selectivity (~10⁴). Ultrathin NbO₂ exhibits excellent TS characteristics such as high temperature stability (~160^oC), good switching uniformity, and extreme scalability.

Keywords

current density; electronic switching systems; memory architecture; niobium compounds; random-access storage; thermal stability; varistors; NbO₂; TS characteristics; cross-point ReRAM; current density; nonlinear VBS; recently-resistive switching memory; scalability; selectivity; switching uniformity; temperature stability; threshold switching characteristics; ultrathin NbO₂ device; varistor-type bidirectional selector device; Current density; Films; Scalability; Switches; Temperature; Temperature measurement; Thermal stability; cross-point memroy; selectivity; selector; threshold switching; varistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Cellular Nanoscale Networks and Their Applications (CNNA), 2012 13th International Workshop on

Conference_Location

Turin

ISSN

2165-0160

Print_ISBN

978-1-4673-0287-6

Type

conf

DOI

10.1109/CNNA.2012.6331466

Filename

6331466