Title :
Experimental study on static dielectric constant of GaInNAs
Author :
Uchiyama, M. ; Kondow, M. ; Wu, S.D. ; Momose, H. ; Morifuji, M. ; Ikari, T. ; Fukushima, S. ; Fukuyama, Atsuhiko
Author_Institution :
Osaka Univ., Suita
Abstract :
By analysing exciton binding energies, we have experimentally investigated static dielectric constant of GaInNAs. Contrary to conventional semiconductors, it was found that both static dielectric constant and bandgap decrease by adding nitrogen.
Keywords :
III-V semiconductors; binding energy; energy gap; excitons; gallium compounds; indium compounds; permittivity; GaInNAs; exciton binding energies; static dielectric constant; Charge carrier processes; Dielectric constant; Dielectric materials; Dielectric measurements; Energy measurement; Excitons; Gallium arsenide; III-V semiconductor materials; Nitrogen; Temperature measurement; GaInNAs; exciton binding energy; static dielectric constant;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703071
