Title :
Enhancement of the recombination rate of InAs quantum dots in a photonic crystal light emitting diode
Author :
Chauvin, N. ; Bitauld, D. ; Fiore, A. ; Balet, L. ; Li, L.H. ; Alloing, B. ; Francardi, M. ; Gerardino, A.
Author_Institution :
COBRA Res. Inst., Eindhoven Univ. of Technol., Eindhoven
Abstract :
InAs quantum dots emitting at 1.3 mum and located inside a photonic crystal membrane nanocavity are studied by electrical pumping. An increase of the recombination rate is observed for quantum dots in resonance with the cavity mode.
Keywords :
III-V semiconductors; indium compounds; light emitting diodes; photonic crystals; semiconductor quantum dots; InAs; cavity mode resonance; electrical pumping; photonic crystal light emitting diode; photonic crystal membrane nanocavity; recombination rate; semiconductor quantum dots; wavelength 1.3 mum; Biomembranes; Etching; Gallium arsenide; Light emitting diodes; Photonic crystals; Quantum dot lasers; Quantum dots; Radiative recombination; Resonance; Spontaneous emission; InAs/GaAs quantum dots; photonic crystal; telecom wavelength;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703072
