Thermal phenomena in silicon-germanium molecular beam epitaxial growth

Author

Allen, F.G.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1988

fDate

11-13 May 1988

Firstpage

181

Lastpage

189

Abstract

Thermally activated processes control nearly all steps in the cleaning, growth and doping of molecular-beam-grown epitaxial films. The temperature dependence of five such processes important in the emerging technology of MBE growth of silicon and germanium films is discussed: (1) SiO₂ removal in the initial cleaning of the substrate, (2) surface diffusion during normal MBE growth, (3) the `sticking´ coefficient of dopants evaporated during growth, (4) the process of solid phase epitaxial regrowth and (5) thermal relief of strain in Si-Ge strained superlattices

Keywords

elemental semiconductors; germanium; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; silicon; Si-Ge strained superlattices; cleaning; doping; epitaxial films; molecular beam epitaxial growth; solid phase epitaxial regrowth; sticking coefficient; surface diffusion; temperature dependence; thermal relief; Cleaning; Doping; Germanium silicon alloys; Molecular beam epitaxial growth; Process control; Semiconductor films; Silicon germanium; Solids; Substrates; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal Phenomena in the Fabrication and Operation of Electronic Components: I-THERM '88, InterSociety Conference on

Conference_Location

Los Angeles, CA

Type

conf

DOI

10.1109/ITHERM.1988.28700

Filename

28700