Title :
Temperature sensor applications of diode-connected MOS transistors
Author :
Filanovsky, I.M. ; Lim, Su Tarn
Author_Institution :
Alberta Univ., Edmonton, Alta., Canada
Abstract :
The transconductance characteristics of a MOS transistor realized in a submicron technology have the zero-temperature coefficient (ZTC) bias point. The gate-source voltage of such transistor is linearly dependent on temperature when the transistor is diode-connected and biased by a current source. The slope of the dependence is related to the bias current value, and can be positive, negative or zero. Hence, the diode-connected transistor can be used as a controllable temperature sensor. This conclusion was experimentally verified using a circuit designed for 0.18 μm CMOS technology.
Keywords :
CMOS analogue integrated circuits; MOSFET; compensation; temperature sensors; 0.18 micron; CMOS technology; controllable temperature sensor; diode-connected MOS transistors; diode-connected MOSFETs; mobility; submicron technology; temperature sensor applications; threshold voltage; transconductance characteristics; transistor gate-source voltage; zero-temperature coefficient bias point; CMOS technology; Circuits; Diodes; Equations; MOSFETs; Temperature control; Temperature dependence; Temperature sensors; Threshold voltage; Transconductance;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Conference_Location :
Phoenix-Scottsdale, AZ
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010946
