Title :
Thermal stresses in the bulk and epitaxial growth of III-V materials
Author :
Jordan, A.S. ; Caruso, R.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
Summary form only given. Large temperature gradients and substantial differences in thermal expansion coefficients are among the major factors for thermal stress generation in many materials systems. The field of electronic materials provides striking illustrations with regard to the role of thermal stress in crystal growth. In the LEC (liquid encapsulation Czochralski) growth of GaAs and InP, the current understanding of dislocation generation is based on the quasi-steady state (QSS) heat transfer/thermal stress model. The theory not only yields correctly the observed dislocation patterns of
Keywords :
III-V semiconductors; crystal growth from melt; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor growth; GaAs; InP; LEC; ambient temperature gradient; boules; crystal growth; defect density; dislocation generation; dislocation patterns; hardening; heat transfer/thermal stress model; quasi-steady state; temperature gradients; thermal expansion coefficients; thermal stress generation; Crystalline materials; Encapsulation; Epitaxial growth; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Temperature; Thermal expansion; Thermal factors; Thermal stresses;
Conference_Titel :
Thermal Phenomena in the Fabrication and Operation of Electronic Components: I-THERM '88, InterSociety Conference on
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/ITHERM.1988.28703
