Title :
A hybrid photonic-integrated electroabsorption modulator device for 50-Gb/s DQPSK generation
Author :
Kazmierski, C. ; Dupuis, N. ; Decobert, J. ; Alexandre, F. ; Jany, C. ; Garreau, A. ; Landreau, J. ; Kang, I. ; Chandrasekhar, S. ; Buhl, L. ; Bernasconi, P.G. ; Liu, X. ; Raybon, G. ; Giles, C.R. ; Rasras, M. ; Cappuzzo, M. ; Gomez, L.T. ; Chen, Y.F. ; E
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis
Abstract :
We report a compact hybrid photonic-integrated optical device consisting of AlGaInAs/InP electroabsorption modulators and a four-arm silica-on-silicon planar lightwave circuit optical interferometer. We use the device to generate 50-Gb/s NRZ-DQPSK signal with excellent performances comparable to those of the commercial lithium niobate DQPSK modulators, while requiring only 2.5Vpp drive signals.
Keywords :
III-V semiconductors; aluminium compounds; differential phase shift keying; electroabsorption; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; modulators; quadrature phase shift keying; silicon-on-insulator; AlGaInAs-InP; DQPSK generation; bit rate 50 Gbit/s; electroabsorption modulators; four-arm silica-on-silicon planar lightwave circuit optical interferometer; hybrid photonic-integrated electroabsorption modulator device for; integrated optical device; Hybrid power systems; Indium phosphide; Optical filters; Optical interferometry; Optical modulation; Optical transmitters; Optical waveguides; Programmable control; Quadrature phase shift keying; Silicon compounds; QPSK modulation; electroabsroption modulator; photonic integrated device;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703073
