Continuous wave InGaAsP/InP Fabry-Perot lasers on silicon

Author

Dupont, T. ; Grenouillet, L. ; Philippe, P. ; Perrin, M. ; Gilet, P. ; Ben Bakir, B. ; Fedeli, J.M. ; Grosse, P. ; Di Cioccio, L. ; Chelnokov, A. ; Lelarge, F. ; Pommereau, F. ; Duan, G.H. ; Gentner, J.L.

Author_Institution

CEA-LETI, MINATEC, Grenoble

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

2

Abstract

We present 1.55 mum InGaAsP/InP Fabry-Perot lasers on silicon realized by a die-to-wafer CMOS compatible SiO₂/SiO₂ bonding process. The devices run under continuous wave operation at room temperature with a maximal output power of 4 mW and a threshold current of 108 mA at 15degC.

Keywords

III-V semiconductors; bonding processes; electrical contacts; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor lasers; silicon; silicon compounds; InGaAsP-InP; Si; SiO₂; continuous wave Fabry-Perot lasers; current 108 mA; die-wafer CMOS compatible bonding process; electrical contacts; power 4 mW; semiconductor laser diode; silicon photonics; size 1.55 mum; temperature 15 C; temperature 293 K to 298 K; Fabry-Perot; Gold; Heat sinks; III-V semiconductor materials; Indium phosphide; Power generation; Semiconductor lasers; Silicon; Threshold current; Wafer bonding; Semiconductor lasers; heterogeneous integration; silicon photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703074

Filename

4703074