Title :
Continuous wave InGaAsP/InP Fabry-Perot lasers on silicon
Author :
Dupont, T. ; Grenouillet, L. ; Philippe, P. ; Perrin, M. ; Gilet, P. ; Ben Bakir, B. ; Fedeli, J.M. ; Grosse, P. ; Di Cioccio, L. ; Chelnokov, A. ; Lelarge, F. ; Pommereau, F. ; Duan, G.H. ; Gentner, J.L.
Author_Institution :
CEA-LETI, MINATEC, Grenoble
Abstract :
We present 1.55 mum InGaAsP/InP Fabry-Perot lasers on silicon realized by a die-to-wafer CMOS compatible SiO2/SiO2 bonding process. The devices run under continuous wave operation at room temperature with a maximal output power of 4 mW and a threshold current of 108 mA at 15degC.
Keywords :
III-V semiconductors; bonding processes; electrical contacts; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor lasers; silicon; silicon compounds; InGaAsP-InP; Si; SiO2; continuous wave Fabry-Perot lasers; current 108 mA; die-wafer CMOS compatible bonding process; electrical contacts; power 4 mW; semiconductor laser diode; silicon photonics; size 1.55 mum; temperature 15 C; temperature 293 K to 298 K; Fabry-Perot; Gold; Heat sinks; III-V semiconductor materials; Indium phosphide; Power generation; Semiconductor lasers; Silicon; Threshold current; Wafer bonding; Semiconductor lasers; heterogeneous integration; silicon photonics;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703074
