• DocumentCode
    1816490
  • Title

    DHBT with Esaki base emitter junction having A 60 NM wide emitter contact

  • Author

    Elias, Cohen D. ; Gavrilov, A. ; Cohen, S. ; Kraus, S. ; Ritter, D.

  • Author_Institution
    Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa
  • fYear
    2008
  • fDate
    25-29 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on a double heterojunction bipolar transistor with an Esaki base emitter tunnel junction. The emitter and base contact are deposited simultaneously on top of the emitter contact layer. Transistors with 60 nm wide emitters were fabricated. The Esaki tunneling current did not degrade the gain of the device at high current density. The backward diode between the base contact and the base layer exhibited specific resistivity lower than 100 Omega-mum2.
  • Keywords
    current density; electrical resistivity; heterojunction bipolar transistors; tunnelling; Esaki base emitter tunnel junction; Esaki tunneling current; base contact; base layer; current density; double heterojunction bipolar transistor; resistivity; size 60 nm; Conductivity; Contact resistance; Current density; Degradation; Diodes; Doping; Indium gallium arsenide; Indium phosphide; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
  • Conference_Location
    Versailles
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-2258-6
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2008.4703076
  • Filename
    4703076
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1816490