Title :
DHBT with Esaki base emitter junction having A 60 NM wide emitter contact
Author :
Elias, Cohen D. ; Gavrilov, A. ; Cohen, S. ; Kraus, S. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa
Abstract :
We report on a double heterojunction bipolar transistor with an Esaki base emitter tunnel junction. The emitter and base contact are deposited simultaneously on top of the emitter contact layer. Transistors with 60 nm wide emitters were fabricated. The Esaki tunneling current did not degrade the gain of the device at high current density. The backward diode between the base contact and the base layer exhibited specific resistivity lower than 100 Omega-mum2.
Keywords :
current density; electrical resistivity; heterojunction bipolar transistors; tunnelling; Esaki base emitter tunnel junction; Esaki tunneling current; base contact; base layer; current density; double heterojunction bipolar transistor; resistivity; size 60 nm; Conductivity; Contact resistance; Current density; Degradation; Diodes; Doping; Indium gallium arsenide; Indium phosphide; Tunneling; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703076
