• DocumentCode
    1816587
  • Title

    Cell growth and attachment to AlGaN surfaces for biosensor applications

  • Author

    Podolska, Anna ; Seeber, Ruth M. ; Kocan, Martin ; Kocan, Martina ; Pfleger, Kevin D G ; Parish, Giacinta ; Nener, Brett D.

  • Author_Institution
    Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
  • fYear
    2010
  • fDate
    22-26 Feb. 2010
  • Firstpage
    264
  • Lastpage
    267
  • Abstract
    This investigation of the biocompatibility of AlGaN/GaN HEMT structure and HEK-293FT cells shows that material is suitable for future biological applications. In our experiment wells were filled with HEK-293-FT cell in Dulbecco´s Modified Eagle Medium (DMEM), and pieces of AlGaN/GaN wafers were placed in some wells while others were left as control wells for comparison of growth and mortality rates. These samples were prepared by cleaning sequentially with acetone, isopropanol, and deionised water. A total of 48 small wells of diameter 8mm were used, where 24 were with samples and 24 were control wells. The sizes of the AlGaN/GaN samples were 4×2 mm. Long-term experiment under standard conditions of 5% CO2 and 37C degree for set of different concentrations reflect process trough the time and concentration dependence. Semiconductors surface wasn´t modified in any way, so direct contact between AlGaN/GaN and cells was obtained. The increasing amount of the cells with time, confirming a healthy growth rate, and comparable mortality rates to the control wells. Direct assessment of attachment of the cells shows strong attachment to the AlGaN/GaN surface without any surface optimization. These results are an important foundation for further development of biosensors utilising AlGaN/GaN HEMT structures and HEK cells as the core elements.
  • Keywords
    III-V semiconductors; aluminium compounds; cellular biophysics; gallium compounds; high electron mobility transistors; semiconductor growth; semiconductor quantum wells; surface cleaning; wide band gap semiconductors; AlGaN-GaN; Dulbecco modified eagle medium; HEK-293FT cell growth; HEMT structure; acetone; biocompatibility; biosensor; deionised water; high electron mobility transistors; isopropanol; mortality rates; quantum wells; semiconductor surface; size 2 mm; size 4 mm; size 8 mm; surface cleaning; temperature 37 degC; Aluminum gallium nitride; Biosensors; Floors; Gallium nitride; Surface morphology; Surface treatment; III-V semiconductor materials; attachment; biocompatibility; biosensor; living cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    978-1-4244-5261-3
  • Electronic_ISBN
    978-1-4244-5262-0
  • Type

    conf

  • DOI
    10.1109/ICONN.2010.6045220
  • Filename
    6045220