DocumentCode :
1816653
Title :
How non-invasive are metal nano-apertures on a semiconductor quantum well?
Author :
Hetzler, J. ; Wegener, M. ; Khitrova, G. ; Gibbs, H.M.
Author_Institution :
Inst. fur Angewandte Phys., Karlsruhe Univ., Germany
fYear :
2001
fDate :
11-11 May 2001
Firstpage :
50
Lastpage :
51
Abstract :
Summary form only given. Metal apertures, with diameters down to 100 nm, on semiconductor quantum well (QW) samples have extensively been used to obtain subwavelength optical resolution in quantum dot experiments, e.g. When preparing such samples for time-resolved experiments, we have noticed that the optical properties of the semiconductor film underneath the metal aperture do not remain unchanged. Our investigations have shown (a) that this effect is intrinsic for a QW near the surface and (b) that the interplay of optically excited carriers and the built-in electrostatic potential well underneath the aperture leads to characteristic ring structures in luminescence images.
Keywords :
electric potential; metallic thin films; nanostructured materials; photoluminescence; semiconductor quantum wells; GaAs; built-in electrostatic potential well; luminescence images; metal nano-apertures; optical properties; optically excited carriers; quantum dot experiments; ring structures; semiconductor film; semiconductor quantum well; subwavelength optical resolution; time-resolved experiments; Apertures; Energy exchange; Gold; Optical films; Optical scattering; Optical surface waves; Particle scattering; Plasmons; Quantum dots; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
Type :
conf
DOI :
10.1109/QELS.2001.961837
Filename :
961837
Link To Document :
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