Title :
A 42 to 56GHz wide band CMOS power amplifier
Author :
Pinpin Yan ; Jixin Chen ; Wei Hong ; Xin Jiang
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
Abstract :
A wide band power amplifier is designed by using 90 nm CMOS process. By proper arrangement of frequency response among circuit stages, the amplifier exhibit maximum gain of 15 dB at 47-48 GHz and 3 dB bandwidth from 42 to 56 GHz. This amplifier could be used in Q-LINKPAN or 802.11aj communication standard.
Keywords :
CMOS integrated circuits; power amplifiers; wireless LAN; 802.11aj communication standard; CMOS process; Q-LINKPAN; circuit stages; frequency 42 GHz to 56 GHz; frequency 47 GHz to 48 GHz; frequency response; wide band CMOS power amplifier; Bandwidth; CMOS integrated circuits; Gain measurement; Millimeter wave communication; Power amplifiers; Scattering parameters; CMOS; Q-LINKPAN; power amplifier;
Conference_Titel :
Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China
Conference_Location :
Rome, Italy
DOI :
10.1109/UCMMT.2013.6641540
