Title :
Electrically-driven metal-insulator transition of VO2 thin films in a nanoscale metal-oxide-metal device structure
Author :
Dong-Hong Qiu ; Qi-Ye Wen ; Qing-Hui Yang ; Zhi Chen ; Yu-Lan Jing ; Huai-Wu Zhang
Author_Institution :
State Key Lab. of Electron. Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
We report the growth of vanadium dioxide (VO2) films on metal electrode with a thin SiO2 buffer and the fabrication of nanoscale metal-oxide-metal junction. The thermal-induced metal-insulator transition with a change of resistance of 2 orders of magnitude is observed and the threshold voltage is as low as 1.6V.
Keywords :
MIS devices; metal-insulator transition; nanoelectronics; semiconductor thin films; silicon compounds; thermal resistance; vanadium compounds; SiO2; VO2; electrically-driven metal-insulator transition; metal electrode; nanoscale metal-oxide-metal device structure; nanoscale metal-oxide-metal junction fabrication; resistance; thermal-induced metal-insulator transition; thin buffer; threshold voltage; vanadium dioxide thin films; Educational institutions; Electrodes; Films; Junctions; Nanoscale devices; Optical switches; Silicon; Electrical switching characteristics; Metal-insulator transition; Metal-oxide-metal junction; Vanadium dioxide;
Conference_Titel :
Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China
Conference_Location :
Rome, Italy
DOI :
10.1109/UCMMT.2013.6641563
