Electrically-driven metal-insulator transition of VO2 thin films in a nanoscale metal-oxide-metal device structure

Author

Dong-Hong Qiu ; Qi-Ye Wen ; Qing-Hui Yang ; Zhi Chen ; Yu-Lan Jing ; Huai-Wu Zhang

Author_Institution

State Key Lab. of Electron. Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2013

fDate

9-11 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

We report the growth of vanadium dioxide (VO₂) films on metal electrode with a thin SiO₂ buffer and the fabrication of nanoscale metal-oxide-metal junction. The thermal-induced metal-insulator transition with a change of resistance of 2 orders of magnitude is observed and the threshold voltage is as low as 1.6V.

Keywords

MIS devices; metal-insulator transition; nanoelectronics; semiconductor thin films; silicon compounds; thermal resistance; vanadium compounds; SiO₂; VO₂; electrically-driven metal-insulator transition; metal electrode; nanoscale metal-oxide-metal device structure; nanoscale metal-oxide-metal junction fabrication; resistance; thermal-induced metal-insulator transition; thin buffer; threshold voltage; vanadium dioxide thin films; Educational institutions; Electrodes; Films; Junctions; Nanoscale devices; Optical switches; Silicon; Electrical switching characteristics; Metal-insulator transition; Metal-oxide-metal junction; Vanadium dioxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China

Conference_Location

Rome, Italy

Type

conf

DOI

10.1109/UCMMT.2013.6641563

Filename

6641563