Title :
A 0.8-μm BiCMOS technology for ASIC applications
Author :
Ham, T.E. ; Osenbach, J.W. ; Thoma, M.J. ; Vitkavage, S.C. ; Nagy, J.J. ; Morris, B.L. ; Dennis, D.C. ; Bechtold, P.F. ; Boulin, D.M. ; Kearney, J.W.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
A novel process is demonstrated for a 0.8-μm BiCMOS process flow by forming a base oxide for NPN transistors using high-pressure oxidation. This process allows improved control over the base implant dose, in the depth of the peak dose, in the precise control of the amount of implant, and in spread of the dose due to thermal processing. Data showing the advantages of this process flow are presented, and some circuit information is given
Keywords :
BiCMOS integrated circuits; 0.8 micron; ASIC applications; BiCMOS technology; HIPOX; NPN transistors; SRAM; base oxide; drivers; high-pressure oxidation; implant control; logic circuits; process flow; rapid oxide growth; Application specific integrated circuits; BiCMOS integrated circuits; Epitaxial growth; Implants; Oxidation; Rapid thermal processing; Silicon; Strips; Thickness control; Voltage control;
Conference_Titel :
Custom Integrated Circuits Conference, 1993., Proceedings of the IEEE 1993
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0826-3
DOI :
10.1109/CICC.1993.590763
