Title :
InN: The low bandgap III-nitride semiconductor
Author :
Georgakilas, Alexandros
Author_Institution :
Microelectron. Res. Group, Univ. of Crete, Heraklion
Abstract :
An overview of our understanding of InN (0001) epitaxial growth and material properties is presented. Thermodynamic and kinetic aspects of the epitaxial growth of InN by nitrogen rf plasma source molecular beam epitaxy were analysed and the self-regulated growth mechanism of InN was determined. Optimized InN films were grown with thicknesses up to 10 mum. Fundamental material properties, such as lattice parameters and bandgap energy were determined. The acceptor-like electrical activity of threading dislocations was evaluated. GaN barrier-enhanced Schottky diodes were fabricated on a thin InN channel and could modulate its carrier concentration.
Keywords :
III-V semiconductors; Schottky diodes; carrier density; dislocations; energy gap; indium compounds; lattice constants; molecular beam epitaxial growth; semiconductor epitaxial layers; thermodynamic properties; wide band gap semiconductors; GaN; InN; Schottky diodes; bandgap III-nitride semiconductor; bandgap energy; carrier concentration; epitaxial growth; lattice parameters; nitrogen rf plasma source molecular beam epitaxy; self-regulated growth mechanism; semiconductor films; thermodynamic properties; threading dislocations; Epitaxial growth; Kinetic theory; Lattices; Material properties; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Plasma sources; Semiconductor films; Thermodynamics; InN; molecular beam epitaxy;
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-2004-9
DOI :
10.1109/SMICND.2008.4703325
