InN: The low bandgap III-nitride semiconductor

Author

Georgakilas, Alexandros

Author_Institution

Microelectron. Res. Group, Univ. of Crete, Heraklion

Volume

1

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

43

Lastpage

52

Abstract

An overview of our understanding of InN (0001) epitaxial growth and material properties is presented. Thermodynamic and kinetic aspects of the epitaxial growth of InN by nitrogen rf plasma source molecular beam epitaxy were analysed and the self-regulated growth mechanism of InN was determined. Optimized InN films were grown with thicknesses up to 10 mum. Fundamental material properties, such as lattice parameters and bandgap energy were determined. The acceptor-like electrical activity of threading dislocations was evaluated. GaN barrier-enhanced Schottky diodes were fabricated on a thin InN channel and could modulate its carrier concentration.

Keywords

III-V semiconductors; Schottky diodes; carrier density; dislocations; energy gap; indium compounds; lattice constants; molecular beam epitaxial growth; semiconductor epitaxial layers; thermodynamic properties; wide band gap semiconductors; GaN; InN; Schottky diodes; bandgap III-nitride semiconductor; bandgap energy; carrier concentration; epitaxial growth; lattice parameters; nitrogen rf plasma source molecular beam epitaxy; self-regulated growth mechanism; semiconductor films; thermodynamic properties; threading dislocations; Epitaxial growth; Kinetic theory; Lattices; Material properties; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Plasma sources; Semiconductor films; Thermodynamics; InN; molecular beam epitaxy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2008. CAS 2008. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-2004-9

Type

conf

DOI

10.1109/SMICND.2008.4703325

Filename

4703325