• DocumentCode
    1817440
  • Title

    Hierarchal silica nanowire growth via single step annealing

  • Author

    Shalav, A. ; Elliman, R.G.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2010
  • fDate
    22-26 Feb. 2010
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    Branched silica nanowires were grown on silicon substrates using a gold-catalyzed vapor-liquid-solid process in which the substrate was covered with a silicon capping layer. The reduced O2 partial pressure due to the capping layer is shown to result in regions of frustrated nanowire growth. By comparing electron micrographs from different regions, a growth mechanism for the branched nanowires is proposed.
  • Keywords
    annealing; crystal growth from vapour; nanowires; silicon compounds; Si; SiO2; capping layer; electron micrographs; frustrated nanowire growth; gold-catalyzed vapor-liquid-solid process; hierarchal silica nanowire growth; silicon capping layer; silicon substrates; single step annealing; Annealing; Gold; Oxidation; Silicon; Silicon compounds; Substrates; active oxidation; nanowires; pea-pod; secondary growth; silica (SiOx);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    978-1-4244-5261-3
  • Electronic_ISBN
    978-1-4244-5262-0
  • Type

    conf

  • DOI
    10.1109/ICONN.2010.6045252
  • Filename
    6045252
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1817440