Title :
Analytical semi-empirical model for SER sensitivity estimation of deep-submicron CMOS circuits
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
An analytical expression is proposed for the estimation of the soft-error rate (SER) sensitivity of circuits designed in deep-submicron CMOS technologies. The model parameters for a given technology and for a specific radiation type have been determined by combining experimental accelerated SER test results with critical charge data obtained from circuit simulations. The resulting analytical models are discussed for the cases of the alpha-induced SER of a 0.18 μm process and for both the alpha- and neutron-induced SER of a 0.13 μm process. The results indicate that the approach provides an efficient means to predict the contributions of individual nodes to the SER of a circuit. The method is shown to be effective in the evaluation of the impact of design modifications on the circuit SER.
Keywords :
CMOS integrated circuits; circuit simulation; integrated circuit modelling; integrated circuit testing; 0.13 micron; 0.18 micron; SER sensitivity estimation; alpha-induced SER; analytical semi-empirical model; circuit simulations; deep-submicron CMOS circuits; model parameters; neutron-induced SER; soft-error rate estimation; Alpha particles; Analytical models; CMOS integrated circuits; CMOS technology; Circuit simulation; Circuit testing; Computational modeling; Laboratories; Life estimation; Semiconductor device modeling;
Conference_Titel :
On-Line Testing Symposium, 2005. IOLTS 2005. 11th IEEE International
Print_ISBN :
0-7695-2406-0
DOI :
10.1109/IOLTS.2005.15
