Title :
Modeling of trap discharging processes in Multiple Quantum Well structures
Author :
Ciurea, M.L. ; Iancu, V. ; Stavarache, I. ; Lepadatu, A.M. ; Rusnac, E.
Author_Institution :
Nat. Inst. of Mater. Phys., Buchares
Abstract :
The paper presents the modeling of trap discharging processes in Multiple Quantum Well nanostructures. The coupling between trapping and detrapping phenomena, due to the CaF2 buffer layers is discussed. The relative role of tunneling and displacement currents is also analyzed. The model allows the determination of trap parameters that are not directly measurable. The results are in good agreement with the experimental data.
Keywords :
buffer layers; elemental semiconductors; nanostructured materials; semiconductor quantum wells; silicon; tunnelling; CaF2; Si; buffer layers; displacement currents; multiple quantum well nanostructures; nanocrystalline silicon; trap discharging process; tunneling; Buffer layers; Electrodes; Heating; Nanostructured materials; Nanostructures; Physics; Quantum well devices; Silicon; Substrates; Temperature dependence; nanocrystalline silicon; traps;
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-2004-9
DOI :
10.1109/SMICND.2008.4703332
