Deep level transient spectroscopy study of defects at Si/SiO2 and Si/Si3N4 interfaces

Author

Johnson, B.C. ; Rahman, H.U. ; Gauja, E. ; Ramer, R. ; McCallum, J.C.

Author_Institution

Australian Res. Council Centre of Excellence for Quantum Comput. Technol., Univ. of Melbourne, Parkville, VIC, Australia

fYear

2010

fDate

22-26 Feb. 2010

Firstpage

333

Lastpage

336

Abstract

The properties of traps at SiO2/Si and Si3N4/Si interfaces were examined and compared using deep level transient spectroscopy (DLTS). Small pulse DLTS was used to determine the effective electron capture cross-section of the interface states. Similar trends are found for both systems with the capture cross-section decreasing rapidly towards the band edge. The effective capture cross-section and energy level is also given for the Si≡Si3 defect at the Si3N4/Si interface.

Keywords

deep level transient spectroscopy; interface states; silicon; silicon compounds; Si-Si₃N₄; Si-SiO₂; band edge; deep level transient spectroscopy; electron capture cross section; energy level; interface defects; interface states; interface traps; small pulse DLTS; Films; Interface states; Physics; Silicon; Silicon compounds; Temperature measurement; Transient analysis; Deep level transient spectroscopy; cross-section; interface trap density; silicon nitride;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology (ICONN), 2010 International Conference on

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4244-5261-3

Electronic_ISBN

978-1-4244-5262-0

Type

conf

DOI

10.1109/ICONN.2010.6045257

Filename

6045257