DocumentCode :
1817606
Title :
Ultraviolet MSM photodetector based on GaN micromachining
Author :
Müller, A. ; Konstantinidis, G. ; Dragoman, M. ; Neculoiu, D. ; Dinescu, A. ; Androulidaki, M. ; Kayambaki, M. ; Stavrinidis, A. ; Vasilache, D. ; Buiculescu, C. ; Petrini, I. ; Anton, C. ; Dascalu, D. ; Kostopoulos, A.
Author_Institution :
IMT-Bucharest, Bucharest
Volume :
1
fYear :
2008
fDate :
13-15 Oct. 2008
Firstpage :
91
Lastpage :
94
Abstract :
This paper presents the manufacturing and the characterization of GaN membrane supported MSM photodetector structures obtained by means of nanolithographic techniques. Two different runs of MSM photodetectors, with different dimensions of the MSM structures and different GaN membrane thickness, have been performed and the detectors performances are annalised. Very low dark currents and unexpected high values, in the range of 50-100 A/W for the UV detectors responsivity have been obtained.
Keywords :
micromachining; nanolithography; photodetectors; GaN; micromachining; nanolithography; ultraviolet MSM photodetector; Biomembranes; Dark current; Detectors; Gallium nitride; Manufacturing; Micromachining; Photodetectors; Semiconductor materials; Silicon; Substrates; GaN membranes; UV photodetector; dark current; nanolithography; responsivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-2004-9
Type :
conf
DOI :
10.1109/SMICND.2008.4703336
Filename :
4703336
Link To Document :
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