A pn-SiC diode as a radiation detector

Author

Kinoshita, Akira ; Iwami, Motohiro ; Nakano, Itsuo ; Tanaka, Reisaburo ; Kamiya, Tomihiro ; Ohi, Akihiko ; Ohshima, Takeshi ; Fukushima, Yasutaka

Author_Institution

Fac. of Sci., Okayama Univ., Japan

Volume

2

fYear

2003

fDate

19-25 Oct. 2003

Firstpage

1346

Abstract

We evaluated pn-SiC (silicon carbide) particle detectors exposed to 5.486 MeV alpha particles from a sealed radioactive source of ²⁴¹Am and 3.26 eV (380 nm) pulsed Ultra-Violet (UV) light at 100 Hz from a Light Emitting Diode (LED). The pn junction SiC diode was made by the implantation of phosphorus (P) ions (140, 60, 90 keV) into p-type 6H-SiC epitaxial layers (5 μm) grown onto p⁺-type substrates. The mean pulse height from detector increased with the supplied reverse bias voltage for each irradiation, alpha particles and UV light. We discuss relation of the pulse height distribution obtained by the UV light and the alpha particles to the depletion width with diffusion length of carriers.

Keywords

alpha-particle detection; semiconductor counters; semiconductor diodes; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 100 Hz; 3.26 eV; 380 nm; 5 micron; 5.486 MeV; SiC; alpha particles; pn-SiC diode; radiation detector; sealed radioactive source; Alpha particles; Atomic measurements; Conducting materials; Electrodes; Epitaxial layers; Light emitting diodes; Radiation detectors; Schottky diodes; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2003 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8257-9

Type

conf

DOI

10.1109/NSSMIC.2003.1351943

Filename

1351943