Title :
Negative-resistance device using organic thin films
Author :
Kawamoto, A. ; Suzuoki, Y. ; Mizutani, Tomoko
Author_Institution :
Technol. Dev. Center, Nagaoka Univ. of Technol., Niigata, Japan
Abstract :
A new negative-resistance device which had a structure of anode/insulating layer/hole transport layer/cathode was fabricated by thermal CVD and vacuum deposition. Its current-voltage characteristics at room temperature showed a remarkable negative resistance. A current peak was observed around 5∼6V with increasing voltage. It decreased with increasing the width of an insulating layer. The peak voltage also increased with increasing the ionization potential of dye or the barrier of hole tunneling. The current peak decreased with the difference between Fermi level of the anode and ionization potential of insulating layer. These suggest that the negative resistance around 5∼6V may be explained by the tunneling phenomenon.
Keywords :
Fermi level; chemical vapour deposition; dyes; insulating thin films; ionisation potential; negative resistance devices; tunnelling; vacuum deposition; 293 to 298 K; 5 to 6 V; Fermi level; anode/insulating layer/hole transport layer/cathode structure; barrier; current-voltage properties; dye; hole tunneling; insulating layer; ionization potential; negative-resistance device; organic thin films; room temperature; thermal CVD; vacuum deposition; Anodes; Cathodes; Electrodes; Insulation; Ionization; Temperature; Thermal resistance; Thin film devices; Tunneling; Voltage;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on
Print_ISBN :
0-7803-7725-7
DOI :
10.1109/ICPADM.2003.1218362
