Silicon RF-GCMOS IC technology for RF mixed-mode wireless applications

Author

Jun Ma ; Dan-Bin Liang ; Ngo, D. ; Spears, E. ; Yeung, B. ; Courson, B. ; Spooner, D. ; Lamey, D. ; Alvarez, J. ; Teraji, T. ; Ford, J. ; Sunny Cheng

Author_Institution

Commun. Products Lab., Motorola Inc., Mesa, AZ, USA

Volume

1

fYear

1997

fDate

8-13 June 1997

Firstpage

123

Abstract

A submicron silicon Radio Frequency Graded-Channel MOS (RF-GCMOS) IC technology has been developed for wireless communication applications. The technology is based on a low power, low cost GCMOS VLSI technology with fully integrated passive components and optimized GC-MOSFETs for RF mixed-mode operations. For the first time, excellent RF and mixed-mode performance is demonstrated by the highly integrated RF GCMOS technology. The results show that this technology is most promising for battery-powered system-on-a-chip applications.

Keywords

MOS integrated circuits; UHF integrated circuits; VLSI; integrated circuit technology; mixed analogue-digital integrated circuits; radio equipment; silicon; RF mixed-mode wireless communication; Si; battery-powered system-on-a-chip; integrated passive components; low power VLSI; silicon RF-GCMOS IC technology; submicron radio frequency graded-channel MOS; Application specific integrated circuits; CMOS technology; Costs; Immune system; Implants; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.604536

Filename

604536