DocumentCode :
1818511
Title :
Characterization of the PbI2 crystal as a material for radiation detectors
Author :
Shoji, T. ; Sakamoto, Kazumitsu ; Ohba, K. ; Suehiro, T. ; Hiratate, Y.
Author_Institution :
Tohoku Inst. of Technol., Sendai, Japan
Volume :
1
fYear :
1996
fDate :
2-9 Nov 1996
Firstpage :
25
Abstract :
We have been studying a radiation detector which uses lead iodide crystal. The growth of PbI2 crystal used two kinds of method. One is the zone melting method and the other is the vapor phase epitaxy method. The performance of the detector fabricated from a crystal grown by the former method showed better characteristics than the detector fabricated from the crystal grown by the latter. Results of XPS and photoluminesence measurement, suggest that the behavior of the iodine atoms in the crystal influenced and controlled the performance of the detector
Keywords :
X-ray photoelectron spectra; lead compounds; photoluminescence; semiconductor counters; vapour phase epitaxial growth; zone melting; PbI2; PbI2 crystal; PbI2 detectors; XPS; photoluminesence; radiation detector; vapor phase epitaxy method; zone melting method; Atomic layer deposition; Crystalline materials; Electrons; Epitaxial growth; Etching; Lattices; Lead; Photomultipliers; Radiation detectors; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location :
Anaheim, CA
ISSN :
1082-3654
Print_ISBN :
0-7803-3534-1
Type :
conf
DOI :
10.1109/NSSMIC.1996.590882
Filename :
590882
Link To Document :
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