DocumentCode :
1818695
Title :
Ultrafast phase transition dynamics in GeSb alloys
Author :
Roeser ; Kim, A.M.-T. ; Callan, J.P. ; Mazur, E. ; Solis, J.
Author_Institution :
Dept. of Phys., Harvard Univ., Cambridge, MA, USA
fYear :
2001
fDate :
11-11 May 2001
Firstpage :
107
Abstract :
Summary form only given. There has been a considerable research effort on laser-induced phase transitions in Sb-rich alloys since the late 1980s. Thin films of GeSb allow optically-induced, optically-reversible, crystalline to amorphous phase transitions that are both very fast (ns) and are accompanied by a large reflectivity change (up to 20%). In 1998, Sokolowski-Tinten et al. reported evidence of an ultrafast (200 fs) transition of amorphous GeSb to the crystalline phase. We present the most thorough experimental study to date of laser-induced ultrafast phase transitions in GeSb alloys. We monitor changes in the full dielectric function over a broad energy range following excitation by an pump pulse.
Keywords :
III-V semiconductors; amorphous semiconductors; germanium compounds; high-speed optical techniques; laser beam effects; semiconductor thin films; solid-state phase transformations; 200 fs; GeSb; GeSb Alloys; GeSb thin films; Sb-rich alloys; crystalline to amorphous phase transitions; full dielectric function; large reflectivity change; laser-induced phase transitions; laser-induced ultrafast phase transitions; monitor; optically-induced; optically-reversible; ultrafast phase transition dynamics; ultrafast transition; Amorphous materials; Crystallization; Laser transitions; Monitoring; Optical films; Optical pumping; Pump lasers; Reflectivity; Transistors; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
Type :
conf
DOI :
10.1109/QELS.2001.961919
Filename :
961919
Link To Document :
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