The influence of deep levels on the admittance of MIS structures with sol-gel TiO2 insulator film

Author

Simeonov, S. ; Szekeres, A. ; Minkov, I. ; Ivanova, K. ; Gartner, M. ; Parlog, C.

Author_Institution

Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia

Volume

2

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

237

Lastpage

240

Abstract

The admittance- voltage characteristics of MIS structures with TiO₂(La) dielectric films, have been measured in the 100 Hz-100 kHz test voltage frequency range. It has been established that the dielectric constant of these dielectric films increases with the decrease of the test voltage frequency. The conductance of these MIS structures increases with the test voltage frequency in the same 100 Hz-100 kHz frequency range. These admittance measurements are used to estimate the density of deep levels, responsible for observed dependence of the dielectric constant on the test voltage frequency in investigated MIS structures.

Keywords

MIS structures; deep levels; dielectric thin films; electric admittance; insulating thin films; lanthanum; permittivity; titanium compounds; MIS structures; TiO₂:La; admittance; deep levels; dielectric constant; dielectric films; frequency 100 Hz to 100 kHz; test voltage frequency; Admittance measurement; Capacitance measurement; Dielectric constant; Dielectric films; Dielectric measurements; Frequency measurement; Impedance measurement; Semiconductor films; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2008. CAS 2008. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-2004-9

Type

conf

DOI

10.1109/SMICND.2008.4703390

Filename

4703390