Title :
Recombination properties of ZnIn2S4:Cu single crystals
Author :
Zhitar, V.F. ; Pavlenko, V.I. ; Arama, E.D. ; Shemyakova, T.D.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau
Abstract :
Recombination characteristics of ZnIn2S4 single crystals doped with high copper concentration were investigated. The spectra of photoconductivity, spectra of excitation and radiation of luminescence at 20degC are given. Their peculiarities are described and analyzed. Comparison of the spectra allowed to propose the model for recombination processes and the dominating mechanism of radiation transitions for single crystals of this compound. It was shown that these processes are determined by the system of deep levels and by exponentially distributed states.
Keywords :
carrier lifetime; copper; deep levels; doping profiles; impurities; indium compounds; photoconductivity; photoluminescence; semiconductor materials; zinc compounds; ZnIn2S4:Cu; copper concentration; copper impurity; deep levels; direct-gap semiconductor; excitation spectra; luminescence; photoconductivity; photoluminescence; radiation transitions; recombination properties; temperature 20 C; Copper; Crystallization; Crystals; Impurities; Laser excitation; Luminescence; Photoconductivity; Power engineering and energy; Radiative recombination; Semiconductor device doping;
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-2004-9
DOI :
10.1109/SMICND.2008.4703391
