Title :
Critical parameters in superconductor single crystal wires of doped lead telluride
Author :
Zasavitsky, E.A. ; Kantser, V.G.
Author_Institution :
Inst. of Electron. Eng. & Ind. Technol., Acad. of Sci. of Moldova, Kishinev
Abstract :
Influence of Tl content on superconducting characteristics of thin single crystal wires of semiconductor compound PbTe<Tl> in the temperature region 0.4 divide 4,2 K and magnetic field up to 1,2 T are investigated. Thallium average concentration variation was 0.001 divide 0.02 at %. Single crystal wires (with diameters d = 5 divide 100 mum) were obtained from solution melt by filling of quartz capillary with the following crystallization of material. It is revealed, that at low temperatures in singlecrystal wires of PbTe<Tl> transition in the superconducting state is observed. The temperature of transition correlates with impurity concentration (for singlecrystal wires of PbTe<Tl> at thallium concentration 2% Tc=2,1K). Significant peak-effect is observed in the magnetic field near HC1 and HC2. Mechanisms leading to superconducting transition and anomalous dependence of critical current vs magnetic field in the vicinity of the HC1 and HC2 are discussed. The interpretation of the obtained results is given based on model of an impurity with skipped valence and flux line lattice deformation.
Keywords :
IV-VI semiconductors; critical currents; crystal growth from melt; crystallisation; doping profiles; flux flow; impurities; lead compounds; semiconductor doping; superconducting critical field; superconducting semiconductors; superconducting transition temperature; thallium; PbTe:Tl; critical current; critical fields; crystallization; dopant concentration; doped lead telluride sample; flux line lattice deformation; impurity concentration; magnetic field; magnetic flux density 1 T; magnetic flux density 2 T; quartz capillary; semiconductor compound; solution melt growth; superconducting transition temperature; superconductor single crystal wires; Crystalline materials; Crystallization; Filling; Impurities; Lead compounds; Magnetic fields; Magnetic materials; Superconducting filaments and wires; Superconducting materials; Superconducting transition temperature; Superconducting semiconductors; impurity with skipped valence; lead chalcogenides; peak-effect;
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-2004-9
DOI :
10.1109/SMICND.2008.4703394