Electrical properties of SBT capacitor with top electrodes

Author

Cho, C.N. ; Kim, J.S. ; Oh, Y.C. ; Shin, C.G. ; Kim, C.H. ; Choi, W.S. ; Hong, J.W. ; Lee, J.U.

Author_Institution

Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea

Volume

1

fYear

2003

fDate

1-5 June 2003

Firstpage

250

Abstract

The A Sr_0.7Bi_2.6Ta₂O₉(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO₂/SiO₂/Si) using RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 750°C and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40 μC/cm² and 30 kV/cm respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.81×10^-10 A/cm² respectively.

Keywords

X-ray diffraction; annealing; bismuth compounds; crystal orientation; electrodes; ferroelectric capacitors; ferroelectric materials; ferroelectric thin films; leakage currents; permittivity; scanning electron microscopy; sputtered coatings; strontium compounds; (105) orientation; 750 degC; Pt electrode; Pt-TiO₂-SiO₂-Si; Pt/TiO₂/SiO₂/Si electrode; RF magnetron sputtering; SBT capacitor; SBT thin films; SEM; Sr_0.7Bi_2.6Ta₂O₉; Sr_0.7Bi_2.6Ta₂O₉ thin films; XRD; bilayered perovskite phase; coercive electric field; dielectric constant; electrical properties; grains; leakage current density; oxygen annealing; remanent polarization; Annealing; Bismuth; Capacitors; Electrodes; Radio frequency; Semiconductor thin films; Sputtering; Strontium; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on

ISSN

1081-7735

Print_ISBN

0-7803-7725-7

Type

conf

DOI

10.1109/ICPADM.2003.1218399

Filename

1218399