Title :
Electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 junctions
Author :
Pintilie, L. ; Pintilie, I. ; Vrejoiu, I. ; Alexe, M.
Author_Institution :
Nat. Inst. of Mater. Phys., Magurele
Abstract :
The electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 (PZT-STON) junctions were investigated on a broad range of temperatures. It was found that the hysteresis loop is strongly asymmetric, due to the asymmetry in the leakage current. The capacitance-voltage characteristic has a butterfly shape although it is also asymmetric because of the different nucleation and compensation conditions at the two interfaces. The junction shows a strong photovoltaic effect in the 200- 500 nm wavelength range as short-circuit currents of the order of nA for an illuminated surface of 0.018 mm2. This makes the PZT-STON junctions attractive for UV optoelectronic applications.
Keywords :
MIS structures; dielectric hysteresis; ferroelectric thin films; lead compounds; leakage currents; niobium; nucleation; photovoltaic effects; semiconductor materials; strontium compounds; Pb(ZrTi)O3-(SrTiO3:Nb); UV optoelectronic applications; butterfly shape; capacitance-voltage characteristic; compensation; electric properties; ferroelectric properties; ferroelectric thin films; hysteresis loop; leakage current; metal-ferroelectric-semiconductor structure; n-type semiconductor; nucleation; photoelectric properties; photovoltaic effect; short-circuit currents; wavelength 200 nm to 500 nm; Electrodes; Ferroelectric materials; Hysteresis; Optical films; Photovoltaic effects; Physics; Polarization; Schottky diodes; Temperature distribution; Transistors; ferroelectric; junction; photovoltaic effect; thin films;
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-2004-9
DOI :
10.1109/SMICND.2008.4703406
