Author :
Saitoh, Y. ; Akamine, T. ; Inoue, M. ; Yamanaka, J. ; Echigo, N. ; Miyahara, S. ; Kamiya, M. ; Ikeda, H. ; Matsuda, T. ; Bozek, A. ; Haba, J. ; Koike, S. ; Ozaki, H. ; Tanaka, M. ; Iwasaki, H. ; Higashi, Y. ; Tsuboyama, T. ; Yamada, Y. ; Banas, E. ; Natka
Abstract :
The previous prototype of the double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by oxide-nitride-oxide (ONO) dielectric film showed band-to-band tunneling (BBT) current at the field-plate structure for the N+ strip, which represented a limitation to the biasing configuration. We report improved characteristics of the modified field-plate structure and the wide-pitch n-side readout using a multi p-stop structure combined thereon
Keywords :
detector circuits; nuclear electronics; silicon radiation detectors; N+ strip; band-to-band tunneling current; biasing configuration; double-sided silicon microstrip detector; field-plate; integrated coupling capacitors; multi P-stop structure; oxide-nitride-oxide dielectric film; wide-pitch N-side readout; Capacitors; Decision support systems; Detectors; Dielectric films; Electrodes; Face detection; Microstrip; Physics; Silicon; Strips;
