Capacitance-voltage characteristics of the CdS/CdTe/Te heterojunctions

Author

Maticiuc, N. ; Spalatu, N. ; Potlog, T.

Author_Institution

Phys. Dept., Moldova State Univ., Chisinau

Volume

2

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

317

Lastpage

320

Abstract

CdS/CdTe/Te heterojunction have been studied by capacitance-voltage measurements over the temperature range 293 K-393 K. The potential of diffusion, profile of the ionized-charge concentration in the space charge region of heterojunction and its thickness are derived from the heterojunction capacitance measured at different bias voltages. The charge carrier concentrations calculated from (S/C)² = f(U) for low and high voltage ranges, respectively are (1-3)ldr10¹⁴ cm^-3 and it is associated with the volume concentration of CdTe and (2-5) 10¹³ cm^-3 which corresponds to the region of interface of the CdS/CdTe/.

Keywords

II-VI semiconductors; cadmium compounds; carrier density; diffusion; elemental semiconductors; semiconductor heterojunctions; space charge; tellurium; tellurium compounds; wide band gap semiconductors; CdS-CdTe-Te; capacitance-voltage characteristics; charge carrier concentrations; diffusion; heterojunctions; ionized-charge concentration; space charge region; temperature 293 K to 393 K; Capacitance measurement; Capacitance-voltage characteristics; Charge measurement; Current measurement; Heterojunctions; Space charge; Tellurium; Temperature distribution; Temperature measurement; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2008. CAS 2008. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-2004-9

Type

conf

DOI

10.1109/SMICND.2008.4703413

Filename

4703413