• DocumentCode
    1819551
  • Title

    PAE improvement using 2nd harmonic source injection at x-band

  • Author

    Haynes, Merv ; Cripps, Steve C. ; Benedikt, Johannes ; Tasker, Paul J.

  • Author_Institution
    Selex Galileo Ltd., Luton, UK
  • fYear
    2012
  • fDate
    3-4 Sept. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Theory and measurements are presented comparing Class B amplifier performance of a 0.5 W GaAs pHEMT driven with (a) a sinusoidal signal or (b) using 2nd harmonic input injection. Engineering the input waveform in this way leads to a class B operating mode requiring 3.4 dB less input drive at 9 GHz. This increases power gain and maintains the output power. The 2nd harmonic injection case then shows a 5.9% PAE improvement over the class B case.
  • Keywords
    gallium arsenide; high electron mobility transistors; microwave amplifiers; 2nd harmonic source injection; Class B amplifier performance; GaAs; PAE improvement; X-band; class B case; frequency 9 GHz; gain 3.4 dB; pHEMT; power 0.5 W; Gallium arsenide; Indexes; Logic gates; PHEMTs; RNA; Wireless communication; Efficiency; PHEMT; Power Amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
  • Conference_Location
    Dublin
  • Print_ISBN
    978-1-4673-2950-7
  • Electronic_ISBN
    978-1-4673-2948-4
  • Type

    conf

  • DOI
    10.1109/INMMIC.2012.6331936
  • Filename
    6331936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1819551