Title :
Transmit and receive amplifiers for e-band communications systems using GaAs pHEMT technology
Author :
Powell, John ; Moore, M. ; Munday, P. ; Sloan, R. ; Duff, C.I. ; Rice, P.
Author_Institution :
Skyarna Ltd., Birmingham, UK
Abstract :
Measured performance is given for a transmit and a receive amplifier MMIC fabricated using the WINsemi PP10 GaAs pHEMT process in the band 71 to 76 GHz. Small signal circuit measurements are compared with `first cut´ transistor and circuit models and demonstrate reasonable correlation. Model developments are currently underway to assess improvements to simulated data. Initial measured performance indicates that this process is suitable for applications to E band offering the potential for highly integrated affordable chipsets.
Keywords :
III-V semiconductors; MMIC amplifiers; gallium arsenide; high electron mobility transistors; millimetre wave amplifiers; transistors; E-band communication system; GaAs; WINsemi PPI0 pHEMT process; frequency 71 GHz to 76 GHz; high integrated affordable chipset; receive amplifier; small signal circuit measurement; transmit amplifier; Abstracts; Educational institutions; Gain measurement; Indexes; MMICs; PHEMTs; Volume measurement; Amplifiers; Gallium arsenide; MIMICs; Millimeter wave circuits;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
Conference_Location :
Dublin
Print_ISBN :
978-1-4673-2950-7
Electronic_ISBN :
978-1-4673-2948-4
DOI :
10.1109/INMMIC.2012.6331937
