Title :
A D-band phase compensated variable gain amplifier
Author :
Muller, Dirk ; Diebold, Sebastian ; Massler, Hermann ; Tessmann, A. ; Leuther, A. ; Zwick, T. ; Kallfass, I.
Author_Institution :
Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany
Abstract :
This paper presents a variable gain amplifier (VGA) for D-band (110 - 170 GHz) applications using metamorphic high electron mobility transistors (mHEMT) with gate lengths of 100 nm. The VGA is based on a cascode architecture with gate-widths of 2×30μm and is designed with phase compensation techniques. The overall chip-size is 0.75×0.75mm2. With 50Ω terminations and a 2V supply-voltage the maximum gain is approximately 10 dB with a control range of over 16 dB. Phase deviations versus gain are less than 4° at frequencies around 161 GHz with input- and output return loss both better than -7 dB.
Keywords :
high electron mobility transistors; millimetre wave amplifiers; millimetre wave transistors; D-band phase compensated VGA; D-band phase compensated variable gain amplifier; cascode architecture; frequency 110 GHz to 170 GHz; mHEMT; metamorphic high electron mobility transistors; phase compensation techniques; phase deviations; resistance 50 ohm; size 100 nm; voltage 2 V; CMOS integrated circuits; CMOS technology; Capacitors; Gain; Gallium arsenide; Logic gates; Silicon germanium;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
Conference_Location :
Dublin
Print_ISBN :
978-1-4673-2950-7
Electronic_ISBN :
978-1-4673-2948-4
DOI :
10.1109/INMMIC.2012.6331939
