Title :
Systematic investigations on MESFETs and passive components transplanted by epitaxial lift off onto host materials with various resistivities
Author :
Morf, T. ; Biber, C. ; Bachtold, W.
Author_Institution :
Electron. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
In this paper we present RF measurements on MESFETs and spiral inductors fabricated on GaAs and transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently reattached to a new host substrate.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; inductors; semiconductor epitaxial layers; GaAs; MESFET; RF measurement; epitaxial lift off; passive component; spiral inductor; substrate resistivity; Conductivity; Etching; Gallium arsenide; Indium phosphide; Laboratories; MESFETs; Radio frequency; Scanning electron microscopy; Silicon; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.604543
