Single-beam second-harmonic spectroscopic interferometry of buried interfaces of Column IV semiconductors

Summary form only given. Single-beam second-harmonic (SH) spectroscopic interferometry (SHSI) is proposed as a combined spectroscopic nonlinear optical technique which allows one to measure simultaneously the spectra of the phase and amplitude of the SH radiation from the buried semiconductor interface. The combination of the SH phase and amplitude spectra, extracted from the SHSI data, is more sensitive to parameters of resonances and circumvents the sign uncertainty of the real part of quadratic susceptibility inherent in conventional spectroscopy of SH intensity. In this paper, the spectral dependences of the phase and amplitude of the SH field from the buried oxidized Si[111] and Ge[111] interfaces are measured in the spectral range of the E/sub 2/ critical point (CP) of Si and E/sub 1/ and E/sub 2/ CP of Ge using SHIS. The different types of spectral lineshapes of the SH resonances, excitonic for Si and 2D for Ge are observed.