Title :
High performance quantum well micro-hall device for current sensing in inverters
Author :
White, T. ; Kunets, Vasyl P. ; Hirono, Yusuke ; Ware, M.E. ; Mantooth, Homer Alan ; Salamo, G.J.
Author_Institution :
Inst. for Nanosci. & Eng., Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
An InGaAs quantum well remotely-doped heterostructure grown by MBE was fabricated as a micro-Hall device and applied as a remote current sensor. Detailed studies of device sensitivities, signal linearity, and noise were performed over broad temperature and frequency ranges. Good performance was demonstrated up to 500 K with magnetic sensitivities as high as 1400 V/A/T at 80 K and 1000 V/A/T at 390 K. Detection limits at 100 kHz of 3 nT and 50 nT were measured for 80 K and 390 K, respectively. These studies suggest the need to develop magnetometers based on wide-band gap semiconductors for temperatures above 500 K.
Keywords :
Hall effect devices; electric current measurement; electric sensing devices; gallium arsenide; indium compounds; invertors; molecular beam epitaxial growth; quantum well devices; remote sensing; InGaAs; MBE; current sensing; inverter; magnetic flux density 3 nT; magnetic flux density 50 nT; quantum well microHall device; remote current sensor; remotely doped heterostructure; temperature 390 K; temperature 80 K; Educational institutions; Indium gallium arsenide; Magnetic field measurement; Noise; Sensitivity; Temperature measurement; Temperature sensors; Magnetic sensor; absolute sensitivity; detection limit; high temperature performance; low-frequency noise;
Conference_Titel :
Power Electronics for Distributed Generation Systems (PEDG), 2013 4th IEEE International Symposium on
Conference_Location :
Rogers, AR
DOI :
10.1109/PEDG.2013.6785606
