Inverse active load-pull in an inverse Doherty amplifier

Author

Hone, Thomas M. ; Bensmida, S. ; Morris, K.A. ; Beach, M.A. ; McGeehan, J.P. ; Lees, J. ; Benedikt, J. ; Tasker, P.J.

Author_Institution

Centre for Commun. Res., Univ. of Bristol, Bristol, UK

fYear

2013

fDate

20-20 Jan. 2013

Firstpage

4

Lastpage

6

Abstract

A dedicated inverse Doherty amplifier is presented in this paper using commercially available 10W GaN HEMT devices. Results show that an emulated 1W peaking amplifier and a 10W carrier amplifier can be used to create a highly efficient amplification architecture. Ideal inverse active load-pull is introduced theoretically with experimental results showing good agreement with the theory. A generic characterization scan of the inverse Doherty amplifier yields state of the art drain and power added efficiency in the output power back-off. A drain and power added efficiency of 60% and 50% are obtained at 10dB output power back-off respectively with a maximum output power of 41dBm at 2.1GHz.

Keywords

amplifiers; HEMT device; amplification architecture; art drain; carrier amplifier; dedicated inverse Doherty amplifier; frequency 2.1 GHz; generic characterization scan; inverse active load pull; power 1 W; power 10 W; power added efficiency; Current measurement; Impedance; OFDM; Power generation; Power measurement; Switches; Wireless communication; Digital Doherty; Dual-drive; Inverse active load-pull;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2013 IEEE Topical Conference on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4673-2915-6

Electronic_ISBN

978-1-4673-2931-6

Type

conf

DOI

10.1109/PAWR.2013.6490170

Filename

6490170