Title :
Inverse active load-pull in an inverse Doherty amplifier
Author :
Hone, Thomas M. ; Bensmida, S. ; Morris, K.A. ; Beach, M.A. ; McGeehan, J.P. ; Lees, J. ; Benedikt, J. ; Tasker, P.J.
Author_Institution :
Centre for Commun. Res., Univ. of Bristol, Bristol, UK
Abstract :
A dedicated inverse Doherty amplifier is presented in this paper using commercially available 10W GaN HEMT devices. Results show that an emulated 1W peaking amplifier and a 10W carrier amplifier can be used to create a highly efficient amplification architecture. Ideal inverse active load-pull is introduced theoretically with experimental results showing good agreement with the theory. A generic characterization scan of the inverse Doherty amplifier yields state of the art drain and power added efficiency in the output power back-off. A drain and power added efficiency of 60% and 50% are obtained at 10dB output power back-off respectively with a maximum output power of 41dBm at 2.1GHz.
Keywords :
amplifiers; HEMT device; amplification architecture; art drain; carrier amplifier; dedicated inverse Doherty amplifier; frequency 2.1 GHz; generic characterization scan; inverse active load pull; power 1 W; power 10 W; power added efficiency; Current measurement; Impedance; OFDM; Power generation; Power measurement; Switches; Wireless communication; Digital Doherty; Dual-drive; Inverse active load-pull;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2013 IEEE Topical Conference on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4673-2915-6
Electronic_ISBN :
978-1-4673-2931-6
DOI :
10.1109/PAWR.2013.6490170