DocumentCode
1820142
Title
Wide band transimpedance amplifier at 3 GHz IN 130 nm technology
Author
Kara-Omar, A. ; Vialon, C. ; Dragomirescu, D. ; Coustou, A. ; Plana, R.
Author_Institution
LAAS-CNRS, Univ. de Toulouse, Toulouse
Volume
2
fYear
2008
fDate
13-15 Oct. 2008
Firstpage
407
Lastpage
410
Abstract
This paper presents a transimpedance amplifier designed in ST Microelectronics BiCMOS9MW 130 nm technology. This circuit works as IF (intermediate frequency) buffer for mixer circuits. It presents a 37 dBOmega transimpedance gain, low input impedance, and 100Omega differential output impedance.
Keywords
BiCMOS integrated circuits; differential amplifiers; wideband amplifiers; BiCMOS; differential amplifier; frequency 3 GHz; intermediate frequency buffer; mixer circuits; size 130 nm; wide band transimpedance amplifier; Circuit simulation; Differential amplifiers; Feedback loop; Frequency; Impedance; MOSFETs; Mixers; Paper technology; Resistors; Ultra wideband radar; Amplifier; BiCMOS; Mixer; Transimpedance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-2004-9
Type
conf
DOI
10.1109/SMICND.2008.4703440
Filename
4703440
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