DocumentCode :
1820142
Title :
Wide band transimpedance amplifier at 3 GHz IN 130 nm technology
Author :
Kara-Omar, A. ; Vialon, C. ; Dragomirescu, D. ; Coustou, A. ; Plana, R.
Author_Institution :
LAAS-CNRS, Univ. de Toulouse, Toulouse
Volume :
2
fYear :
2008
fDate :
13-15 Oct. 2008
Firstpage :
407
Lastpage :
410
Abstract :
This paper presents a transimpedance amplifier designed in ST Microelectronics BiCMOS9MW 130 nm technology. This circuit works as IF (intermediate frequency) buffer for mixer circuits. It presents a 37 dBOmega transimpedance gain, low input impedance, and 100Omega differential output impedance.
Keywords :
BiCMOS integrated circuits; differential amplifiers; wideband amplifiers; BiCMOS; differential amplifier; frequency 3 GHz; intermediate frequency buffer; mixer circuits; size 130 nm; wide band transimpedance amplifier; Circuit simulation; Differential amplifiers; Feedback loop; Frequency; Impedance; MOSFETs; Mixers; Paper technology; Resistors; Ultra wideband radar; Amplifier; BiCMOS; Mixer; Transimpedance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-2004-9
Type :
conf
DOI :
10.1109/SMICND.2008.4703440
Filename :
4703440
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1820142
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