Title :
Assessment of advanced anisotropic conductive films for flip-chip interconnection based on Z axis conductors
Author :
Gasse, A. ; Rossat, C. ; Souriau, J.C. ; Gillot, C. ; Glasser, F. ; Clemens, J.C.
Author_Institution :
Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
Anisotropic Conductive Films (ACF) for high density Flip Chip Interconnection have been of growing interest during the last few years. One enhancement which has been clearly identified is the concept of a vertical interconnection sheet with structured Z axis conductors instead of particles. The main advantages of Z axis ACF compared to standard ACF are the possibility to get a low temperature process, a lower pitch and pad surface area with a better electrical contact. In this paper, the Z-axis ACF concept and manufacturing basics are reminded. To assess ACF performances, a specific test vehicle has been designed including Kelvin and daisy-chains patterns. We have performed an extensive reliability study by measuring the contact resistance after thermal cycling and humidity exposure. A good behaviour is observed under thermal cycling whereas some improvements are needed in case of humidity exposure. ACF can be useful to connect CdTe or CdZnTe X and gamma ray detectors to readout chips at low temperature. First results of demonstration are disclosed.
Keywords :
II-VI semiconductors; X-ray detection; cadmium compounds; contact resistance; flip-chip devices; gamma-ray diffraction; semiconductor counters; zinc compounds; CdTe; CdZnTe; Kelvin patterns; Z axis conductors; advanced anisotropic conductive films; daisy-chains patterns; flip-chip interconnection; humidity exposure; low temperature process; lower pitch; pad surface area; thermal cycling; vertical interconnection sheet; Anisotropic conductive films; Conductive films; Conductors; Contacts; Flip chip; Humidity; Performance evaluation; Pulp manufacturing; Surface resistance; Temperature;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352038