Title :
A GaN MOSFET supply modulator compatible with feed forward loop for wideband envelope tracking power amplifier
Author :
Zhancang Wang ; Li Wang ; Rui Ma ; Lanfranco, Sandro
Author_Institution :
Nokia Siemens Networks, CTO Res., Beijing, China
Abstract :
In this paper, a novel supply modulator for envelope tracking power amplifier was presented, which boosts operation bandwidth capability to tracking up to LTE 60MHz by utilizing GaN MOSFET and compatible with feed forward loop to linearize the modulator for wideband, realizing high efficiency trading off linearity as well.
Keywords :
III-V semiconductors; Long Term Evolution; MOSFET; modulators; power amplifiers; wide band gap semiconductors; GaN; GaN MOSFET supply modulator; LTE; feed forward loop; frequency 60 MHz; wideband envelope tracking power amplifier; Feeds; Gallium nitride; MOSFET; Modulation; Nonlinear distortion; Power amplifiers; Switches; Compound semiconductor; GaN MOSFET; energy efficiency; power amplifiers; power supplies;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2013 IEEE Topical Conference on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4673-2915-6
Electronic_ISBN :
978-1-4673-2931-6
DOI :
10.1109/PAWR.2013.6490182
