Title :
Low-power CMOS inductorless bandwidth-enhanced transimpedance amplifier for short-haul applications
Author :
Taghavi, Mohammad Hossein ; Ahmadi, Pouyan ; Belostotski, Leonid ; Haslett, J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
Abstract :
A new technique using parallel current-based circuits and resistive compensation to realize an inductorless transimpedance amplifier (TIA) with enhanced bandwidth is introduced. An example TIA implemented in 0.13¼m 1.2V standard CMOS achieves 3dB bandwidth of 11.2GHz when driven by a large 500fF photodiode capacitance. This design enhances the bandwidth by a factor of 3.86 with less than 0.1dB gain ripple, achieving the highest figure of merit among published 20Gb/s inductorless 0.13μm CMOS designs for short-haul applications.
Keywords :
CMOS integrated circuits; low-power electronics; operational amplifiers; bandwidth 11.2 GHz; bandwidth enhanced transimpedance amplifier; low power CMOS inductorless amplifier; parallel current based circuits; photodiode capacitance; size 0.13 mum; voltage 1.2 V; Bandwidth; CMOS integrated circuits; CMOS technology; Capacitance; Noise; Photodiodes;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2013 IEEE Topical Conference on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4673-2915-6
Electronic_ISBN :
978-1-4673-2931-6
DOI :
10.1109/PAWR.2013.6490184
