Full wave BIE analysis of travelling waves in unbiased/velocity saturated FET structures with linearly controlled current density

Author

Schroeder, W. ; Prost, W. ; Wolff, I.

Author_Institution

Dept. of Electromagn. Theory & Eng., Duisburg Univ., Germany

Volume

1

fYear

1997

fDate

8-13 June 1997

Firstpage

159

Abstract

The Hybrid Wave Boundary Integral Equation method is applied to analyze wave propagation along the width of a linearized InGaAs/InAlAs HFET model with accurate description of all geometrical details. Special consideration is given to the influence of operating conditions on propagation characteristics by introducing separate linear models for unbiased operation, channel depletion and velocity saturated operation. Results are given for the gate and drain mode in the passive device and for the mixed mode in presence of a linearly controlled channel current density.

Keywords

III-V semiconductors; aluminium compounds; boundary integral equations; gallium arsenide; indium compounds; junction gate field effect transistors; millimetre wave field effect transistors; semiconductor device models; FET; InGaAs-InAlAs; channel depletion; drain mode; full wave BIE analysis; gate mode; hybrid wave boundary integral equation; linear HFET model; linearly controlled current density; mixed mode; passive device; travelling wave propagation; unbiased operation; velocity saturation; Conductivity; Current density; Eigenvalues and eigenfunctions; Electrodes; FETs; HEMTs; Integrated circuit modeling; MODFETs; Microwave Theory and Techniques Society; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.604546

Filename

604546