DocumentCode :
1820575
Title :
Radiation hardness improved CMOS sensors as particle detectors in high energy physics and medical applications
Author :
Dulinski, Wojciech ; Berst, Daniel ; Besson, Auguste ; Claus, Gilles ; Colledani, Claude ; Deptuch, Grzegorz ; Deveaux, Michael ; Gay, Arnaud ; Grandjean, Damien ; Gornushkin, Yuri ; Himmi, Abdelkader ; Hu, Christine ; Riester, Jean-Louis ; Valin, Isabell
Author_Institution :
Lab. d´´Electronique et de Phys. des Systemes Instrumentaux, Strasbourg, France
Volume :
1
fYear :
2003
fDate :
19-25 Oct. 2003
Firstpage :
310
Abstract :
The use of CMOS Monolithic Active Pixel Sensors for high precision minimum ionizing particle tracking has been proven to be a viable and powerful novel experimental technique. In this approach a lightly doped thin and partially depleted silicon epitaxial layer is used as a radiation sensitive detector volume. The readout electronics circuitry is integrated directly on top of epitaxy using standard commercial CMOS process. For the pixel pitch of 20μm particle tracking precision of below 2μm and full efficiency have been measured in the past. In this work measurements with CMOS MAPS fabricated on non-epitaxial, high resistivity substrate are presented. Efficient and performing MIP tracking is demonstrated, also for a large 40μm pixel readout pitch. These results proves that the use of epitaxial substrate for MAPS fabrication is not mandatory, opening much larger choice of possible CMOS processes in the future.
Keywords :
CMOS image sensors; counters; nuclear electronics; radiation hardening (electronics); Monolithic Active Pixel Sensors; high precision minimum ionizing particle tracking; medical applications; particle detectors; particle detectors in high energy physics; radiation hardness improved CMOS sensors; radiation sensitive detector volume; readout electronics circuitry; Biomedical equipment; CMOS process; Integrated circuit measurements; Ionizing radiation sensors; Medical services; Particle tracking; Radiation detectors; Semiconductor epitaxial layers; Silicon radiation detectors; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8257-9
Type :
conf
DOI :
10.1109/NSSMIC.2003.1352053
Filename :
1352053
Link To Document :
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