DocumentCode
1820609
Title
Evaluation of effectiveness of median of absolute deviations outlier rejection-based IDDQ testing for burn-in reduction
Author
Sabade, Sagar S. ; Walker, Duncan M.
Author_Institution
Dept. of Comput. Sci., Texas A&M Univ., College Station, TX, USA
fYear
2002
fDate
2002
Firstpage
81
Lastpage
86
Abstract
CMOS chips having high leakage are observed to have high burn-in fallout rate. IDDQ testing has been considered as an alternative to burn-in. However, increased subthreshold leakage current in deep submicron technologies limits the use of IDDQ testing in its present form. In this work, a statistical outlier rejection technique known as the median of absolute deviations (MAD) is evaluated as a means to screen early failures using IDDQ data. MAD is compared with delta IDDQ and current signature methods. The results of the analysis of the SEMATECH data are presented.
Keywords
CMOS integrated circuits; VLSI; failure analysis; integrated circuit reliability; integrated circuit testing; leakage currents; production testing; statistical analysis; CMOS chips; IDDQ testing; SEMATECH data; burn-in fallout rate; burn-in reduction; deep submicron technologies; failure screening; median of absolute deviations; statistical outlier rejection technique; subthreshold leakage current; CMOS technology; Computer science; Costs; Leakage current; Manufacturing; Stress; Subthreshold current; System testing; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Test Symposium, 2002. (VTS 2002). Proceedings 20th IEEE
Print_ISBN
0-7695-1570-3
Type
conf
DOI
10.1109/VTS.2002.1011115
Filename
1011115
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