DocumentCode
1820717
Title
P-type one-sided hexagonal spiral drift detectors
Author
Chen, Wei ; Gatti, Emilio ; Rehak, Pavel
Author_Institution
Brookhaven Nat. Lab., Upton, NY, USA
Volume
1
fYear
2003
fDate
19-25 Oct. 2003
Firstpage
340
Abstract
A new P-type Drift Detector (PDD) with one-sided hexagonal spiral shaped cathodes around the center anode has been designed, simulated, constructed and tested. Large arrays of drift cells are required for the application. The large number of cells forces the design of the drift cell with a minimal number of bonds per cell. The presented design creates the drift field by the spiral-based voltage divider. Moreover, the leakage current created at the depleted part of the detector surface is also collected without an external connection to the cell. The current is collected directly on the inner terminal of the divider. The lithographic processes of the wafer are done only on one side resulting in a much faster fabrication. For the first time, the design makes an active usage of the positive charge in the oxide as a rectifying junction on p-type silicon.
Keywords
drift chambers; silicon radiation detectors; P-type one-sided hexagonal spiral drift detectors; center anode; drift cell; leakage current; lithographic processes; spiral-based voltage divider; Anodes; Cathodes; Detectors; Fabrication; Leak detection; Leakage current; Silicon; Spirals; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN
1082-3654
Print_ISBN
0-7803-8257-9
Type
conf
DOI
10.1109/NSSMIC.2003.1352059
Filename
1352059
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